Search results for "logic gates"

showing 10 items of 17 documents

pH Feedback Lifecycles Programmed by Enzymatic Logic Gates Using Common Foods as Fuels

2021

Abstract Artificial temporal signaling systems, which mimic living out‐of‐equilibrium conditions, have made large progress. However, systems programmed by enzymatic reaction networks in multicomponent and unknown environments, and using biocompatible components remain a challenge. Herein, we demonstrate an approach to program temporal pH signals by enzymatic logic gates. They are realized by an enzymatic disaccharide‐to‐monosaccharide‐to‐sugar acid reaction cascade catalyzed by two metabolic chains: invertase‐glucose oxidase and β‐galactosidase‐glucose oxidase, respectively. Lifetimes of the transient pH signal can be programmed from less than 15 min to more than 1 day. We study enzymatic k…

540 Chemistry and allied sciencesSystems ChemistryKinetics010402 general chemistry01 natural sciencesCatalysisenzymatic logic gatestemporal signalResearch Articleschemistry.chemical_classificationOxidase test010405 organic chemistryGeneral MedicineGeneral ChemistryBiocompatible material0104 chemical sciencesregulatory mechanismsCoupling (electronics)EnzymechemistrypH feedback540 ChemieLogic gatetransient hydrogelBiological systemResearch ArticleAngewandte Chemie International Edition
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Scalable and Privacy-Preserving Admission Control for Smart Grids

2015

International audience; Energy demand and production need to be constantly matched in the power grid. The traditional paradigm to continuously adapt the production to the demand is challenged by the increasing penetration of more variable and less predictable energy sources, like solar photovoltaics and wind power. An alternative approach is the so called direct control of some inherently flexible electric loads to shape the demand. Direct control of deferrable loads presents analogies with flow admission control in telecommunication networks: a request for network resources (bandwidth or energy) can be delayed on the basis of the current network status in order to guarantee some performanc…

EngineeringControl and Optimizationlarge deviationRandom variableDistributed computingReal-time computingprivacyModeling and simulation[INFO.INFO-NI]Computer Science [cs]/Networking and Internet Architecture [cs.NI]PhotovoltaicsAdmission control; Home appliances; Logic gates; Power demand; Privacy; Random variables; Shape; Control and Systems Engineering; Modeling and Simulation; Control and OptimizationWind poweradmission controlSettore ING-INF/03 - Telecomunicazionibusiness.industryBandwidth (signal processing)[SPI.NRJ]Engineering Sciences [physics]/Electric powerdirect load controlShapeLogic gateSmart gridsAdmission controlHome applianceSmart gridControl and Systems EngineeringModeling and SimulationScalabilityPower demand[MATH.MATH-OC]Mathematics [math]/Optimization and Control [math.OC]businessEnergy source
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Interference Cancellation for LoRa Gateways and Impact on Network Capacity

2021

In this paper we propose LoRaSyNc (LoRa receiver with SyNchronization and Cancellation), a second generation LoRa receiver that implements Successive Interference Cancellation (SIC) and time synchronization to improve the performance of LoRa gateways. Indeed, the chirp spread spectrum modulation employed in LoRa experiences very high capture probability, and cancelling the strongest signal in case of collisions can significantly improve the cell capacity. An important feature of LoRaSyNc is the ability to track the frequency and clock drifts between the transmitter and receiver, during the whole demodulation of the interfered frame. Due to the use of low-cost oscillators on end-devices, a s…

General Computer ScienceComputer scienceInternet of ThingsinterferenceChirp spread spectrumSilicon carbideSignalReceiversSettore ING-INF/01 - ElettronicaLoRaSynchronizationLPWANElectronic engineeringDemodulationGeneral Materials ScienceComputer architecturesynchronized signalsscalabilityClocksFrame (networking)TransmitterGeneral Engineeringinterference cancellationLogic gatesLoRaWANTK1-9971Single antenna interference cancellationModulationspreading factorElectrical engineering. Electronics. Nuclear engineeringCapture effectIEEE Access
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Asymmetric nanopore rectification for ion pumping, electrical power generation, and information processing applications

2011

Single-track, asymmetric nanopores can currently be functionalised with a spatially inhomogeneous distribution of fixed charges and a variety of pore tip shapes. Optimising the asymmetric nanopore characteristics is crucial for practical applications in nanofluidics. We have addressed here this question for three cases based on different input/output chemical and electrical signals: (i) ion pumping up a concentration gradient by means of a periodic, time-dependent bias potential, (ii) information processing with a single nanopore acting as the nanofluidic diode of a logic gate, and (iii) electrical energy harvesting using a nanopore that separates two solutions of different salt concentrati…

Nanofluidic diodes as logic gatesGeneral Chemical EngineeringMicrofluidicsConcentration gradientsNanofluidicsNanotechnologyPumpsIonNanoporesRectificationIonic conductionIonic transportElectrochemistryHarvestingDiodeIonsChemistrybusiness.industryConcentration (process)Energy harvestingElectric potential energyNanofluidicsCharge densityLogic gatesElectric rectifiersDiodesData processingNanoporeIon pumpingFISICA APLICADAOptoelectronicsbusinessSynthetic nanopores
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Impact of Electrical Stress and Neutron Irradiation on Reliability of Silicon Carbide Power MOSFET

2020

International audience; The combined effects of electrical stress and neutron irradiation of the last generation of commercial discrete silicon carbide power MOSFETs are studied. The single-event burnout (SEB) sensitivity during neutron irradiation is analyzed for unstressed and electrically stressed devices. For surviving devices, a comprehensive study of the breakdown voltage degradation is performed by coupling the electrical stress and irradiation effects. In addition, mutual influences between electrical stress and radiative constraints are investigated through TCAD modeling.

Nuclear and High Energy PhysicsMaterials scienceRadiation effectsSilicon carbide[PHYS.NEXP]Physics [physics]/Nuclear Experiment [nucl-ex]Stress01 natural sciencesNeutron effectsSilicon carbide (SiC)Stress (mechanics)Semiconductor device modelschemistry.chemical_compoundMOSFETReliability (semiconductor)0103 physical sciencesMOSFETSilicon carbideBreakdown voltageSemiconductor device breakdownSilicon compoundsSingle Event BurnoutNeutronIrradiationElectrical and Electronic EngineeringPower MOSFETPower MOSFETComputingMilieux_MISCELLANEOUSElectric breakdownNeutrons[PHYS]Physics [physics]010308 nuclear & particles physicsbusiness.industryLogic gatesWide band gap semiconductorsSemiconductor device reliability[SPI.TRON]Engineering Sciences [physics]/ElectronicsNuclear Energy and Engineeringchemistry13. Climate actionSingle-event burnout (SEB)Atmospheric neutronsOptoelectronicsbusinessTechnology CAD (electronics)
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Current Transport Mechanism for Heavy-Ion Degraded SiC MOSFETs

2019

IEEE Transactions on Nuclear Science, 66 (7)

Nuclear and High Energy PhysicsMaterials scienceSiC power MOSFETsheavy ion irradiationComputerApplications_COMPUTERSINOTHERSYSTEMS01 natural scienceselektroniikkakomponentitchemistry.chemical_compoundMOSFETgate leakageGate oxidesilicon carbide0103 physical sciencesMOSFETSilicon carbideIrradiationElectrical and Electronic EngineeringPower MOSFETLeakage (electronics)leakage currentsionit010308 nuclear & particles physicsbusiness.industryionisoiva säteilysingle event effectspilaantuminenNuclear Energy and EngineeringchemistrysäteilyfysiikkaLogic gatelogic gatesradiation effectstransistoritOptoelectronicsbusinessAND gate
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Effect of 20 MeV Electron Radiation on Long Term Reliability of SiC Power MOSFETs

2023

The effect of 20 MeV electron radiation on the lifetime of the silicon carbide power MOSFETs was investigated. Accelerated constant voltage stress (CVS) was applied on the pristine and irradiated devices and time-to-breakdown ( T BD ) and charge-to-breakdown ( Q BD ) of gate oxide were extracted and compared. The effect of electron radiation on the device lifetime reduction can be observed at lower stress gate-to-source voltage ( V GS ) levels. The models of T BD and Q BD dependence on the initial gate current ( I G0 ) are proposed which can be used to describe the device breakdown behaviour. peerReviewed

Nuclear and High Energy Physicsionisoiva säteilyelektronitelektroniikkakomponentitstressMOSFETNuclear Energy and Engineeringelectric breakdownsäteilyfysiikkasilicon carbidelogic gatesradiation effectstransistoritElectrical and Electronic Engineeringdegradation
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Proton irradiation-induced reliability degradation of SiC power MOSFET

2023

The effect of 53 MeV proton irradiation on the reliability of silicon carbide power MOSFETs was investigated. Post-irradiation gate voltage stress was applied and early failures in time-dependent dielectric breakdown (TDDB) test were observed for irradiated devices. The applied drain voltage during irradiation affects the degradation probability observed by TDDB tests. Proton-induced single event burnouts (SEB) were observed for devices which were biased close to their maximum rated voltage. The secondary particle production as a result of primary proton interaction with the device material was simulated with the Geant4-based toolkit. peerReviewed

Nuclear and High Energy Physicsprotonitreliabilityprotonsionisoiva säteilyelektroniikkakomponentitstressNuclear Energy and Engineeringsäteilyfysiikkasilicon carbidelogic gatesradiation effectstransistoritElectrical and Electronic Engineering
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Magnetic skyrmions: from fundamental to applications

2016

In this topical review, we will discuss recent advances in the field of skyrmionics (fundamental and applied aspects) mainly focusing on skyrmions that can be realized in thin film structures where an ultrathin ferromagnetic layer (<1 nm) is coupled to materials with large spin-orbit coupling. We review the basic topological nature of the skyrmion spin structure that can entail a stabilization due to the chiral exchange interaction present in many multilayer systems with structural inversion asymmetry. The static spin structures and the dynamics of the skyrmions are also discussed. In particular, we show that skyrmions can be displaced with high reliability and efficiency as needed for t…

PhysicsAcoustics and UltrasonicsCondensed matter physicsSkyrmion02 engineering and technology021001 nanoscience & nanotechnologyCondensed Matter PhysicsCondensed Matter::Mesoscopic Systems and Quantum Hall Effect01 natural scienceslogic gates; microwave oscillator; racetrack memory; skyrmion; spin-Hall effect; spin-torque diode effect; spin-transfer-torque; Electronic Optical and Magnetic Materials; Condensed Matter Physics; Acoustics and Ultrasonics; Surfaces Coatings and FilmsSurfaces Coatings and FilmsElectronic Optical and Magnetic MaterialsSkyrmionQuantum mechanics0103 physical scienceslogic gatesspin-transfer-torqueddc:530spin-torque diode effect010306 general physics0210 nano-technologySkyrmion; spin-transfer-torque; spin-Hall effect; racetrack memory; microwave oscillator; spin-torque diode effect; logic gatesspin-Hall effectracetrack memorymicrowave oscillatorJournal of Physics D: Applied Physics
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Dynamic clock generator and memory mass device using a quantum ring driven by three-color laser fields

2021

We study the behaviour and applications of a quantum ring (QR) under a three-color laser field. In particular we study the emission of harmonics and their temporal evolution through wavelets. These results suggest the use of QR for three important applications: (1) generation of single short pulses, (2) creation of a variable clock generator, (3) a memory mass device through the angular momentum acquired by the electron.

Quantum information High Harmonic Generation Logic GatesPhysicsAngular momentumField (physics)business.industryGeneral Chemical Engineering02 engineering and technologyGeneral ChemistryElectron021001 nanoscience & nanotechnologyLaser01 natural scienceslaw.inventionWaveletOpticslawHarmonics0103 physical sciencesClock generator010306 general physics0210 nano-technologybusinessQuantumRSC Advances
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